Browsing by Subject "Free carrier absorption"
Now showing items 1-7 of 7
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Article
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Article
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Article
Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Article
Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Article
Ultrafast pulsed laser deposition of carbon nanostructures: Structural and optical characterization
(2013)Carbon nanostructured materials were obtained by high-repetition rate pulsed laser ablation of a graphite target using a train of 10-ps duration pulses at 1064 nm in different pressures of high-purity Ar gas. It is ...
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Article
Ultrafast pulsed laser deposition of carbon nanostructures: Structural and optical characterization
(2013)Carbon nanostructured materials were obtained by high-repetition rate pulsed laser ablation of a graphite target using a train of 10-ps duration pulses at 1064 nm in different pressures of high-purity Ar gas. It is ...
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Article
Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 Nanowires
(2015)Ultrafast pump-probe and transient photoluminescence spectroscopy were used to investigate carrier dynamics in β-Ga2O3 nanowires converted to β-Ga2O3/Ga2S3 under H2S between 400 to 600 °C. The β-Ga2O3 nanowires exhibited ...